Process Show

The materials and processing techniques of each part

Component	Consumer Material	Industrial Material	Function	Process	Capability
P/N Thermoelectric Legs	Bi₂Te₃ solid solution (P/N formulas)	High-purity Bi₂Te₃ (precise doping, low R)	Heat exchange via carriers	Smelt→Solidify→Slice→Grind→Sort	±0.01mm cut, ≥95% ZT consistency
Ceramic Substrate	Al₂O₃ (≥20W/m·K)	AlN (≥180W/m·K)	Insulate/conduct heat	Mold→Sinter→Grind→Plate	≤0.005mm flatness, ≥2000V voltage
Metal Electrode	Cu+Ni	Cu+Ni/Au	Connect P/N legs	Stamp→Plate→Cut	±0.02mm, ≤5mΩ contact R
Welding Layer	Sn-Bi solder (low Tm)	Sn-Bi/Ag solder (high T)	Bond/low R heat	Coat→Weld→Clean	±0.01mm pos, ≤0.01% cold solder
Seal Frame	Epoxy/silicone	High-T epoxy/PI	Seal/moisture-proof	Frame encapsulation	≤10⁻³Pa·m³/s air tightness
Pile Assembly	- (integrated)	- (integrated)	Stabilize structure	Sort→Assemble→Test	1-127 pairs, ΔT≥65℃, ≥100MΩ insulation

Common problems of semiconductor cooling sheets and their corresponding solutions

A.Production/process end

Local heating/single arm not working: measure continuity/set high temperature zone → scrap, fully inspected after welding

Low refrigeration efficiency: measuring temperature difference/power consumption → sorting defective products to improve assembly accuracy

Poor insulation/short circuit: leakage current measurement/crack detection → scrap, full insulation inspection

Poor electrode contact: resistance measurement/coating observation → small batch re plating, large batch scrap

Sealing failure/attenuation: check for gaps/moisture → scrap, moisture-proof throughout the entire process

B.Usage/Performance End

Slow cooling/low efficiency: temperature measurement/power supply check → optimize heat dissipation, adjust rated power supply

Same heat for hot and cold/no cooling: measure temperature difference/check insulation/substrate → repair insulation, crack scrap

Large temperature drift/inaccurate temperature control: measuring deviation/power supply → changing voltage regulator, adding closed-loop temperature control

Performance degradation: Compare new film parameters → Replace with new film and ensure moisture resistance

Burn/open circuit: check heat dissipation/test power supply → replace chip to repair heat dissipation, add overvoltage protection

Frost/condensation short circuit: observe frost/measure dew point → clear condensation, install anti condensation device

C.Assembly/matching end

Hot side overheating/no cooling: temperature measurement/check heat dissipation/gap → add silicone grease, replace with suitable heat dissipation components

Uneven temperature of heat sink: set high temperature zone/check thermal conductivity → replace with high thermal conductivity silicone grease and apply it in a standardized manner

Substrate cracking: Check for cracks/torque → scrap, strictly control assembly strength

Insufficient cooling capacity/overcurrent: nuclear demand/parameter adjustment → replace high-power chips, precise selection

Cross heating/efficiency reduction: Check cross heating/insulation layer → package insulation material to block cross heating

Burn/reverse hot/cold: check protection/wiring → replace the chip with positive, add reverse/overvoltage protection

Production process

1. Raw material preparation: Bismuth telluride is the main material, with antimony/seelenium as the dopant. Combined with the specified substrate and copper conductor, it is processed through vacuum melting and directional solidification to produce N/P type ingots; the substrate and the flow guide component are clean and free of impurities, and the flow guide component is protected against oxidation. 2. Steel ingot processing: N/P type steel ingots undergo annealing to relieve internal stress, are precisely cut into standard grains, and unqualified products are screened out. 3. Substrate metallization: The ceramic substrate is equipped with copper/nickel/gold electrodes. Low-melting-point solder paste is applied through sputtering/electroplating to form multi-layer electrodes. High-precision printing is employed, ensuring no missed or false printing of the pads. 4. PN crystal grain arrangement: The automated equipment arranges N/P type crystals alternately on the substrate with solder pads, forming a thermoelectric stack array with precise positioning without any offset. 5. Reflow Soldering: The upper and lower substrates are welded to form a crystal array. The temperature is controlled in two stages for curing to prevent damage; after soldering, ultrasonic cleaning is used to remove residues, and hot air drying is performed. 6. Terminal Outlets: Ultrasonic/laser welding of wires to positive/negative connection terminals to ensure good conductivity and no false soldering. 7. Packaging protection: Apply heat-resistant glue to the edges and connection points to enhance protection; Mark the model, specifications, and production date with inkjet printing. 8. Finished product inspection: Test the cooling capacity, temperature difference, and insulation resistance. After undergoing cold and hot cycle/vibration tests, qualified products will be packaged with anti-static and moisture-proof measures and then stored in the warehouse

Production process

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